| PART |
Description |
Maker |
| IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压，超低功耗的CMOS静态RAM
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| IS62WV51216ALL IS62WV51216BLL |
(IS62WV51216A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
| IS62C51216AL IS62C51216AL-55MLI IS62C51216AL-55TLI |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| BS616UV8010BI BS616UV8010 BS616UV8010BC |
Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit
|
BSI[Brilliance Semiconductor]
|
| BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV402 |
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
| AT27LV040A07 AT27LV040A-90JI AT27LV040A-90JU AT27L |
4-Megabit (512K x 8) Low Voltage OTP EPROM
90NS, PLCC, IND TEMP, GREEN(EPROM) 512K X 8 OTPROM, 90 ns, PQCC32
|
ATMEL Corporation
Atmel, Corp.
|
| NCP702MX30TCG NCP702SN18T1G NCP702SN28T1G NCP702SN |
200 mA, Ultra-Low Quiescent Current, Ultra-Low Noise, LDO Linear Voltage Regulator
|
ON Semiconductor
|
| SPN02N60C3 SPN02N60C305 |
New revolutionary high voltage technology Ultra low gate charge Ultra low effective capacitances
|
Infineon Technologies AG
|
| NCP703MX28TCG NCP703MX18TCG NCP703SN30T1G NCP703SN |
300 mA, Ultra-Low Quiescent Current, IQ 12 A, Ultra-Low Noise, LDO Voltage Regulator
|
ON Semiconductor
|
| BH62UV4000HIG55 BH62UV4000STI55 BH62UV4000DIG55 BH |
Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit
|
Brilliance Semiconductor
|
